Ordering number:EN3512B
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V).
2SA1786 : PNP ...
Ordering number:EN3512B
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V).
2SA1786 :
PNP Epitaxial Planar Silicon
Transistor 2SC4646 :
NPN Triple Diffused Planar Silicon
Transistor
2SA1786/2SC4646
High Voltage Driver Applications
Package Dimensions
unit:mm 2064
[2SA1786/2SC4646]
( ) : 2SA1786
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO hFE
fT Cob VCE(sat) VBE(sat)
VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA VCB=(–)30V, f=1MHz IC=(–)500mA, IB=(–)50mA IC=(–)500mA, IB=(–)50mA
* : The 2SA1786/2SC4646 are classified by 100mA hFE as follows :
40 C 80 60 D 120 100 E 200
E : Emitter C : Collector B : Base
SANYO : NMP
Ratings (–)400 (–)400 (–)5 (–)2 (–)4 1 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
40* (40)60 (25)15
max (–)1.0 (–)1.0 200*
(–)1.0 (–)1.0
Unit
µA µA
MHz pF V V
Any and all SANYO products described or contained herein do not have specifications that can handle applica...