C4710

Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=2100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=500µA VCE=10V, IC=500µA IC=1mA, IB=200µA IC=1mA, IB=200µA IC=10µA, IE=0 IC=100µA, RBE=∞ IE=10µA, IC=0 VCB=100V, f=1MHz 2.55 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI Ratings 2100 2100 5 10 30 2 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 1...