C4736

Ordering number : EN3975A 2SC4736 SANYO Semiconductors DATA SHEET 2SC4736 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features Large current (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High emitter-to-base voltage (VEBO≥15V). Large power type such as PC=1.5W when used without heatsink. It is possible to make appliances more compact because its height on board is 9.5mm. Effective in automatic inserting and counting stocked amount because of being provided for radial taping. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings 80 60 15 2 4 400 1.5 150 --55 to +150 Unit V V V A A mA W °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear contro...