DatasheetsPDF.com

C4915 Dataheets PDF



Part Number C4915
Manufacturers Toshiba
Logo Toshiba
Description 2SC4915
Datasheet C4915 DatasheetC4915 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications 2SC4915 Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur.

  C4915   C4915


Document
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications 2SC4915 Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 40 V 30 V 4 V 20 mA 4 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain ICBO IEBO VCB = 40 V, IE = 0 A VEB = 4 V, IC = 0 A hFE (Note) VCE = 6 V, IC = 1 mA Cre fT Cc・rbb’ NF Gpe VCB = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = −1 mA, f = 30 MHz VCC = 6 V, IE = −1 mA, f = 100 MHz, Figure 1 ⎯ ⎯ 0.1 μA ⎯ ⎯ 0.5 μA 40 ⎯ 200 ⎯ 0.55 ⎯ pF 260 550 ⎯ MHz ⎯ ⎯ 20 ps ⎯ 2.3 5.0 dB 17 23 ⎯ dB Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 100 to 200 Start of commercial production 1992-02 1 2014-03-01 2SC4915 L1: 0.8 mmφ silver plated copper wire, 4 T, 10 mm ID, 8 mm length Figure 1 NF, Gpe Test Circuit Marking 2 2014-03-01 2SC4915 3 2014-03-01 2SC4915 4 2014-03-01 2SC4915 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions .


C4910 C4915 C4919


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)