2SC4919-S

Ordering number : ENA1086 2SC4919-S SANYO Semiconductors DATA SHEET 2SC4919-S NPN Epitaxial Planar Silicon Transistor Muting Circuit Applications Features Ultrasmall-sized package permitting applied sets to be made small and slim. Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=5mA VCE=5V, IC=10mA VCB=10V, f=1MHz Ratings 25 15 15 100 200 20 150 150 --55 to +150 Unit V V V mA mA mA mW °C °C min 800 Ratings typ max Unit 0.1 μA 0.1 μA 3200 240 MHz 1.4 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose...