TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
2SC4935
Unit: mm
• Go...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
2SC4935
Unit: mm
Good hFE linearity
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage Collector current Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VEBO IC IB
PC
5V 3A 0.3 A 2
W 10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
http://store.iiic.cc/
2010-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacit...