A1213 Datasheet (data sheet) PDF - Toshiba Semiconductor

A1213 Datasheet - 2SA1213

A1213   A1213  

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Ampli fier Applications Power Switching Appli cations 2SA1213 Unit: mm • Low satu ration voltage: VCE (sat) = −0.5 V (m ax) (IC = −1 A) • High speed switch ing time: tstg = 1.0 μs (typ.) • Sma ll flat package • PC = 1.0 to 2.0 W ( mounted on a ceramic substrate) • Com plementary to 2SC2873 Absolute Maximum Rat

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Continuous-Time Latch




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