C5460

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications 2SC5460 Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.5 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-8H1A Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-17 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector ...