TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
• Hig...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 400 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
DC Pulse
IC
50 mA
ICP 100
Base current
IB 25 mA
Collector power dissipation
PC
900 mW
JEDEC
TO-92MOD
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter satura...
