2SC5087. C5087 Datasheet

C5087 2SC5087. Datasheet pdf. Equivalent


Part C5087
Description 2SC5087
Feature TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplif.
Manufacture Toshiba
Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 C5087 Datasheet
Recommendation Recommendation Datasheet C5087 Datasheet




C5087
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 3 V
Base current
IB 40 mA
Collector current
IC 80 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
57
18
9.5 13
1
1.1
GHz
dB
dB
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
80 240
Output capacitance
Reverse transfer capacitance
Cob
1.1 1.6 pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre 0.65 1.05 pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2007-11-01



C5087
Marking
2
1
CO
Type Name
hFE Rank
34
2SC5087
2 2007-11-01







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