Document
Ordering number : EN5512C
2SC5347
SANYO Semiconductors
DATA SHEET
2SC5347
NPN Epitaxial Planar Silicon Transistor
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications
Features
• High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking : CZ
Symbol
ICBO IEBO hFE
fT Cob Cre ⏐S21e⏐2 NF
Conditions Mounted on a ceramic board (900mm2✕0.8mm)
Ratings 20 12 2
150 1.3 150 --55 to +150
Conditions
VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz
Ratings min typ
60* 3 4.7 1.3 0.9 68 1.8
max 1.0 10
270*
2.0
3.0
Unit V V V mA W °C °C
Unit
μA μA
GHz pF pF dB dB
* : The 2SC5347 is classified by 50mA hFE as follows :
Rank
D
E
hFE
60 to 120
90 to 180
F 135 to 270
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006 MS IM TC-00000117 /72006AB MS IM TC-00000075 / 21599 TH (KT) / 91296 YK (KOTO) TA-0689 No.5512-1/6
Package Dimensions unit : mm (typ) 7007A-004
Top View 4.5 1.6
1.5
2SC5347
1.0 2.5
4.0
DC Current Gain, hFE
1 0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base 2 : Collector 3 : Emitter
SANYO : PCP
hFE -- IC
3
VCE=5V
2
100 7 5
3 2
10 7 1.0
5
3 2
2 3 5 7 10
2 3 5 7 100
Collector Current, IC -- mA
Cob -- VCB
23 5 ITR08157
f=1MHz
1.0 7 5
3 2
0.1 7 0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector-to-Base Voltage, VCB -- V ITR08159
Reverse Transfer Capacitance, Cre -- pF
Gain-Bandwidth Product, fT -- GHz
10 fT -- IC
7 VCE=5V
5
3 2
1.0 7 5
3 2
0.1 7 1.0
5
3 2
2 3 5 7.