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C5347 Dataheets PDF



Part Number C5347
Manufacturers Sanyo
Logo Sanyo
Description 2SC5347
Datasheet C5347 DatasheetC5347 Datasheet (PDF)

Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Col.

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Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking : CZ Symbol ICBO IEBO hFE fT Cob Cre ⏐S21e⏐2 NF Conditions Mounted on a ceramic board (900mm2✕0.8mm) Ratings 20 12 2 150 1.3 150 --55 to +150 Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz Ratings min typ 60* 3 4.7 1.3 0.9 68 1.8 max 1.0 10 270* 2.0 3.0 Unit V V V mA W °C °C Unit μA μA GHz pF pF dB dB * : The 2SC5347 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 90 to 180 F 135 to 270 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006 MS IM TC-00000117 /72006AB MS IM TC-00000075 / 21599 TH (KT) / 91296 YK (KOTO) TA-0689 No.5512-1/6 Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 1.5 2SC5347 1.0 2.5 4.0 DC Current Gain, hFE 1 0.4 2 0.5 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter SANYO : PCP hFE -- IC 3 VCE=5V 2 100 7 5 3 2 10 7 1.0 5 3 2 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA Cob -- VCB 23 5 ITR08157 f=1MHz 1.0 7 5 3 2 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 23 Collector-to-Base Voltage, VCB -- V ITR08159 Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, fT -- GHz 10 fT -- IC 7 VCE=5V 5 3 2 1.0 7 5 3 2 0.1 7 1.0 5 3 2 2 3 5 7.


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