2SC5085. C5085 Datasheet

C5085 2SC5085. Datasheet pdf. Equivalent


Part C5085
Description 2SC5085
Feature TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 2SC5085 VHF~UHF Band Low Noise Amplif.
Manufacture Toshiba
Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 C5085 Datasheet
Recommendation Recommendation Datasheet C5085 Datasheet




C5085
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5085
2SC5085
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
12
3
40
80
100
125
55~125
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5 7 GHz
16.5
7.5 11
dB
1
dB
1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
80 240
Output capacitance
Reverse transfer capacitance
Cob
1.0
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
pF
Cre 0.65 1.15 pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2007-11-01



C5085
Marking
2SC5085
2 2007-11-01







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