TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications Switching Regulator Appl...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications Switching
Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications
2SC5458
Unit: mm
Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC = 0.4 A)
High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
600 400
7 0.8 1.5 0.5 1.0 10 150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2005-02-01
2SC5458
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO
hFE
VCE (sat) VBE (sat)
VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A IC = 0.3 A, IB = 0.04 A IC = 0.3 A, IB = 0.04 A
Min Typ. Max Unit
― ― 100 µA
― ― 100 µA
600 ―
―
V
400 ―
―
V
20 ― ―
30 ― 80
― ― 1.0 V
― ― 1.3 V
Turn-on time Switching time...