C5465

2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm Excellent switching times: tr = 0.7 µs (max) tf = 0.5 µs (max) (IC = 0.08 A) High collector breakdown voltage: VCEO = 800 V Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 0.8 1.5 0.2 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5465 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 800 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.08 A IC = 0.3 A, IB = 0.06 A IC = 0.3 A, IB = 0.06 A Min Typ. Max Unit ― ― 100 µA ―― 1 mA 900 ― ― V 800 ― ― V 10 ― ― 15 ― ― ― ― 1.0 V ― ― 1.3 V Rise time Switching time Storage time Fall time tr 20 µs IB1 OUTPUT ― ...