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2SC5108. C5108 Datasheet

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2SC5108. C5108 Datasheet






C5108 2SC5108. Datasheet pdf. Equivalent




C5108 2SC5108. Datasheet pdf. Equivalent





Part

C5108

Description

2SC5108



Feature


TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Base current Collector c urrent Collector power dissipation Junc tion temperature Storage temperature ra nge VCBO VCEO VEBO.
Manufacture

Toshiba

Datasheet
Download C5108 Datasheet


Toshiba C5108

C5108; IB IC PC Tj Tstg 20 10 3 15 30 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy l oads (e.g. the application of high tem perature/current/voltage and the signif icant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the o perating conditions (i.e. JEDEC ― operating temperature/cu.


Toshiba C5108

rrent/voltage, etc.) are within the JEI TA ― absolute maximum ratings. Plea se design the appropriate reliability u pon reviewing the TOSHIBA 2-2H1A Tos hiba Semiconductor Reliability Handbook (“Handling Weight: 2.4 mg (typ.) P recautions”/“Derating Concept and M ethods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


Toshiba C5108

. 1 2010-02-17 2SC5108 Electrical Cha racteristics (Ta = 25°C) Characterist ics Symbol Test Condition Min Typ. M ax Unit Collector cut-off current Emit ter cut-off current DC current gain Tra nsition frequency Insertion gain Output capacitance Reverse transfer capacitan ce Collector-base time constant ICBO I EBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) V.

Part

C5108

Description

2SC5108



Feature


TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Base current Collector c urrent Collector power dissipation Junc tion temperature Storage temperature ra nge VCBO VCEO VEBO.
Manufacture

Toshiba

Datasheet
Download C5108 Datasheet




 C5108
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
2SC5108
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
10
3
15
30
100
125
55 to 125
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
operating temperature/current/voltage, etc.) are within the
JEITA
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2010-02-17




 C5108
2SC5108
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
fT
S21e2
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 5 mA, f = 1 GHz
Cob
Cre
Ccrbb’
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
VCB = 5 V, IC = 3 mA, f = 30 MHz
80
4
7
1 μA
1 μA
240
6 GHz
11 dB
0.7 pF
0.5 0.9 pF
5.5 15 ps
Note 1: hFE classification O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
2 2010-02-17




 C5108
2SC5108
3 2010-02-17



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