C5090

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 1.5 20 40 100 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1 GHz VCE = 8 V, IC = 20 mA, f = 2 GHz VCE = 8 V, IC = 5 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 2 GHz Min Typ. Max Unit 7 10 ¾ GHz 10 13 ¾ dB ¾7¾ ¾ 1.1 2.5 dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 20 mA Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ ¾ 1 mA ¾ 1 mA ¾ 160 0.7 ¾ pF 0.5 0.95 pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance ...