2SC5097

NPN 10 GHz RF Wideband Transistor P b Lead(Pb)-Free FEATURES: * SOT-143 package * Low noise figure * High power gain APPLIEATION: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current - Continuous Collector Power Dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IB IC PD Tj Tstg 2SC5097 SOT-143 Value 20 10 1.5 7 15 150 125 -55~125 Unit V V V mA mA mW °C °C Device Marking 2SC5097=N42 WEITRON http://www.weitron.com.tw 1/5 13-Feb-07 2SC5097 ELECTRICAL CHARACTERISTICS (Ta = 25ºC) Characteristics Collector-Emitter Voltage ( IC =10mA , IB=0 ) Collector-Base Voltage ( IC =10µA , IE=0 ) Collector Cut-off current ( VCB=10V , IE=0 ) Emitter Cut-off Current (VCB=1V, IC=0 ) DC current gain (VCE = 6V , IC=7mA ) Transition frequency (VCE = 6V , IC =7mA ) Ootput capacitance (VCB = 10V , IE =0 , f = 1MHz ) (2) Reverse Transfer capacitance (VCB = 10V , IE =0 , f = 1MHz ) (2) Insertion gain ( VCE = 6V , IC=7mA , f = 1GHz ) ( VCE = 6V , IC=7mA , f = 2GHz ) Noise Figure ( VCE = 6V , IC=3mA , f = 1GHz ) ( VCE = 6V , IC=3mA , f = 2GHz ) Symbol VCEO VCBO ICBO IEBO hFE (1) fT Cob Cre Min Typ 10 20 -- -- 50 7 10 - 0.5 - 0.4 Max 1 1 160 0.9 0.85 Unit V V µA µA GHZ pF pF | S21e |² 12.5 7 15.5 10 - dB NF - 1.3 1.8 2.5 3.0 dB 1. hFE Classification R : 50 ~100 O : 80 ~160 2. Cre is measured by 3 terminal method with capacitance bridg...