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C5096 Dataheets PDF



Part Number C5096
Manufacturers Toshiba
Logo Toshiba
Description 2SC5096
Datasheet C5096 DatasheetC5096 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 1.5 7 .

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 1.5 7 15 100 125 −55~125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz Min Typ. Max Unit 7 10 ⎯ GHz ⎯ 13 ⎯ dB 4.5 7.5 ⎯ ⎯ 1.4 ⎯ dB ⎯ 1.8 3.0 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 6 V, IC = 7 mA Output capacitance Reverse transfer capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Min ⎯ ⎯ 50 ⎯ ⎯ 1 Typ. Max Unit ⎯ 1 μA ⎯ 1 μA ⎯ 160 0.5 ⎯ pF 0.4 0.85 pF 2007-11-01 Marking 2SC5096 2 2007-11-01 2SC5096 3 2007-11-01 2SC5096 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 6 V, IC = 3 mA Frequency S11 (MHz) Mag. Ang. 200 0.835 −26.1 400 0.665 −46.5 600 0.501 −62.7 800 0.386 −74.3 1000 0.297 −83.7 1200 0.226 −92.7 1400 0.175 −101.9 1600 0.130 −113.4 1800 0.103 −128.0 2000 0.081 −147.4 S21 Mag. Ang. 7.069 150.4 5.948 130.4 5.021 115.2 4.173 104.3 3.592 95.6 3.140 88.5 2.808 82.3 2.514 76.6 2.293 71.7 2.114 67.3 VCE = 6 V, IC = 7 mA Frequency S11 (MHz) Mag. Ang. 200 0.668 −40.0 400 0.427 −64.4 600 0.280 −79.5 800 0.193 −89.7 1000 0.134 −99.3 1200 0.088 −112.3 1400 0.056 −129.8 1600 0.035 −169.0 1800 0.040 157.0 2000 0.054 131.5 S21 Mag. Ang. 12.306 138.9 8.852 116.1 6.591 102.9 5.191 94.3 4.288 87.8 3.661 81.9 3.232 76.9 2.857 72.1 2.574 68.1 2.363 64.3 S12 Mag. Ang. 0.046 71.0 0.076 60.5 0.095 55.7 0.111 53.7 0.124 53.2 0.137 53.6 0.152 54.1 0.165 54.2 0.179 53.9 0.193 54.8 S12 Mag. Ang. 0.040 67.3 0.061 61.6 0.078 61.8 0.096 62.5 0.112 63.2 0.130 63.8 0.150 63.4 0.168 62.5 0.185 61.4 0.203 61.3 S22 Mag. Ang. 0.899 −19.3 0.745 −30.3 0.630 −35.9 0.552 −38.5 0.500 −39.9 0.465 −41.1 0.442 −42.2 0.421 −43.8 0.405 −45.7 0.388 −47.4 S22 Mag. Ang. 0.786 −27.0 0.579 −35.0 0.476 −35.9 0.420 −35.0 0.390 −34.2 0.374 −34.0 0.366 −34.8 0.356 −36.6 0.347 −39.0 0.338 −40.2 4 2007-11-01 2SC5096 5 2007-11-01 2SC5096 6 2007-11-01 2SC5096 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in t.


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