SQD50N04-5m6

www.vishay.com SQD50N04-5m6 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-252 40 0.0056 50 Single FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D GD Drain Connected to Tab S Top View G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD50N04-5m6-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction)a TC = 25 °Ca TC = 125 °C ID IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 50 45 50 200 40 80 71 23 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc SYMBOL RthJA RthJC LIMIT 50 2.1 UNIT V A mJ W °C UNIT °C/W S12-2006-Rev. B, 20-Aug-12 1 Document Number: 62666 For technical questions, contact: [email protected] THIS DOCUMEN...