Automotive N-Channel MOSFET
www.vishay.com
SQD50N04-3m5L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
Description
www.vishay.com
SQD50N04-3m5L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-252
40 0.0035 0.0042
50 Single
FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
D
GDS Top View
Drain Connected to Tab
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G N-Channel MOSFET S
TO-252 SQD50N04-3m5L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 40 ± 20 50 50 50 200 55 151 136 45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 50 1.1
UNIT V
A
mJ W °C
UNIT °C/W
S12-2006-Rev. B, 20-Aug-12
1
Document Number: 63751
For technical questions, contact: automoste...
Similar Datasheet