KTA1385D

SEMICONDUCTOR TECHNICAL DATA KTA1385D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.3W(Ta=25 Complementary to KTC5103D/L ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING -60 -60 -7 -5 -8 -1 1.0 15 150 -55 150 UNIT V V V A A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10 0.95 MAX DPAK Q AI CJ BD H G FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0 +_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * ICBO IEBO hFE 1 hFE2 (Note) hFE 3 VCE(sat) VBE(sat) TEST CONDITION VCB=-50V, IE=0 VEB=-7V, IC=0 VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2...