isc Silicon NPN Power Transistor
DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz (TYP) ·Complement to Type MJL1302A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio, disk head positioners
and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VCEX
Collector-Emitter Voltage-1.5V
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
VALUE UNIT
200
V
200
V
7
V
200
V
15
A
25
A
200
W
TJ
Junction Temperature
Tstg
Storage Temperature Range
150
℃
-65~150 ℃
MJL3281A
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
MJL3281A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
V(BR)EBO Emitter-Base Voltage
VCE(sat) Collector-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
hFE-4
DC Current Gain
hFE-5
DC Current Gain
hFE-6
DC Current Gain
hFE-7
DC Current Gain
CONDITIONS IC= 50mA; IB= 0 IE = 100 uA, IC = 0 IC= 10A; IB=1A VCB= 200V; IE= 0 VEB= 5V; IC= 0 IC = 100 mA, VCE = 5 V IC = 1 A, VCE = 5 V IC = 3 A, VCE = ...