2SC2290

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYMBOL RATING UNIT V CBO V CES VCEO V EBO IC CP Tj T stg 45 45 18 4 20 175 175 65~175 V V V V A W °C °C ELECTRICAL CHARACTERISTICS (Tc = 25°C) JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2 13B1A CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage D C C urrentG ain Collector Output Capacitance P ow er G ain InputP ow er Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance SYMBOL TEST CONDITION V(BR) CEO IC = 100mA, IB = 0 V (BR) CES IC = 100mA, VEB = 0 V (BR) EBO IE = 1mA, IC = 0 hFE C ob VCE = 5V, CI = 10A * V CB = 12.5V,EI = 0 f = 1MHz Gp Pi ηC IMD V CC = 12.5V, 1f= 28.000MHz, f2 = 28.001MHz Iidle = 50mA Po = 60W PEP (Fig.) Z in Zout V CC = 12.5V, 1f= 28.000MHz, f2 = 28.001MHz Po = 60W PEP MIN. 18 45 4 10 TYP. — — — — MAX. UNIT — — — 150 V V V — — — 500 pF 11.8 13.8 — dB — 2.5 4 W PEP 35 — — % — — 30 dB...