TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (...
TOSHIBA
TRANSISTOR SILICON
NPN EPITAXIAL PLANAR TYPE
2SC2290
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
l Specified 12.5V, 28MHz Characteristics
l Output Power
: Po = 60WPEP (Min.)
l Power Gain
: Gp = 11.8dB (Min.)
l Collector Efficiency
: ηC = 35% (Min.)
l Intermodulation Distortion: IMD = −30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCES VCEO VEBO
IC PC Tj Tstg
RATING
45 45 18 4 20 175 175 −65~175
UNIT
V V V V A W °C °C
JEDEC EIAJ TOSHIBA Weight: 5.2g
Unit in mm
— — 2−13B1A
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please ke...