2SC2782

HG Semiconductors 2sc2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYM B OL V CBO V CEO V EBO IC CP Tj T stg AT RING 36 16 4 20 220 175 65~175 UNIT V V V A W °C °C Unit in mm JEDEC EIAJ TOSHIBA Weight: 5.5g — — 2 C1A Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors 2SC2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage D C C urrentG ain Collector Output Capacitance O utputP ow er P ow er G ain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance V(BR) CBO V(BR) CEO V (BR) EBO hFE Cbo Po Gp Cη IC = 20mA, IE = 0 IC = 50mA, IB = 0 IE = 1mA, IC = 0 VCE = 5V,IC = 10A * V CB = 12.5V,IE = 0 f = 1MHz (Fig.) V CC = 12.5V, f = 175MHz Pi = 18W Zin V CC = 12.5V f = 175MHz, Po = 80W Zout 36 — 16 — 4— 10 — — — — — —— 320 80 90 ― 6.4 6.8 ― 60 70 — — 1.0 + 1.5 — — 1.2 + 1.8 — V V V...