TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2884
2SC2884
Audio Frequency Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC2884
2SC2884
Audio Frequency Amplifier Applications
Unit: mm
High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC (Note 1)
35 30 5 800 160 500
1000
V V V mA mA
mW
PW-MINI JEDEC
JEITA
― SC-62
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test ...