TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC2880
2SC2880
High Voltage Switching Applications
Unit: mm
High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1200
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
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