2SD2525

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm High DC current gain: 100 (min) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) Complementary to 2SB1640 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.5 A Collector power dissipation Junction temperature Storage temperature range PC 1.8 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10T1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation volta...