TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2525
2SD2525
Audio Frequency Power Amplifier Applications
Unit...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SD2525
2SD2525
Audio Frequency Power Amplifier Applications
Unit: mm
High DC current gain: 100 (min) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) Complementary to 2SB1640
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
IC
3 A
Pulse ICP 6
Base current
IB 0.5 A
Collector power dissipation Junction temperature Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation volta...