Ordering number:EN2538A
PNP/NPN Triple Diffused Planar Type Silicon Transistors
2SB1266/2SD1902
AF Power Amplifier Appl...
Ordering number:EN2538A
PNP/
NPN Triple Diffused Planar Type Silicon
Transistors
2SB1266/2SD1902
AF Power Amplifier Applications
Features
· Suitable for sets whose heighit is restricted. · Wide ASO (adoption of MBIT process). · High reliability.
Package Dimensions
unit:mm 2049B
[2SB1266/2SD1902]
( ) : 2SB1266
Specifications
E : Emitter C : Collector B : Base SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Tc=25˚C
Conditions
Ratings (–)60 (–)60 (–)6 (–)3 (–)8 1.65 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Unit
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)0.5A VCB=(–)10V, f=1MHz
(–)100 µA
(–)100 µA
70* 280*
20
(8)40
MHz
(60) pF
110 pF
* : The 2SB1266/2SD1902 are classified by 0.5A hFE as follows :
70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, ...
