Document
TGA2536-FL
5.5 Watt Ku-Band Power Amplifier
Applications
Ku-band communications Ku-band VSAT Point-to-Point Radio
Product Features
Frequency Range: 13.5 – 16 GHz Saturated Output Power: 37.4 dBm Small Signal Gain: 25 dB Bias: Vd = 8 V, Idq = 2.6 A, Vg = -0.6 V typical Pulsed operation
General Description
The TriQuint TGA2536-FL provides 25 dB of small signal gain and 5.5 W of output power across 13.516 GHz. The TGA2536-FL is designed using TriQuint’s proven standard 0.25μm gate pHEMT production process.
The TGA2536-FL features low loss ground-signalground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer board.
This device is ideally suited for Ku-band communications including military, VSAT transmitter and Point to Point Radio applications. The flange lead package has a high thermal conductivity copper alloy base.
Lead-free and RoHS compliant.
Functional Block Diagram
1 14 2 13 3 12 4 11 5 10 69 78
Pin Configuration
Pin #
1,7 2,6,9,13 3,5,10,12
4 8,14 11
Symbol
Vg N/C Gnd RF In Vd RF Out
Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No. ECCN
TGA2536-FL 3A001.b.2.c
Description
Ku-band Power Amplifier
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TGA2536-FL
5.5 Watt Ku-Band Power Amplifier
Specifications Absolute Maximum Ratings
Parameter
Rating
Drain Voltage,Vd
9V
Gate Voltage,Vg
-5 to 0 V
Drain Current, Id
4.4 A
Gate Current range, Ig
-18 to 18 mA
RF Input Power, CW, 50Ω,T = 25ºC 21 dBm
Channel Temperature, Tch
200oC
Mounting Temperature (30 Seconds)
260 oC
Storage Temperature
-40 to 150 oC
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Recommended Operating Conditions
Parameter
Vd
Idq (no RF drive)
Id_drive (under RF drive)
Vg
Min
Typ Max Units
8V 2.6 A 3.3 A
-0.6 V
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 8 V, 20% duty cycle, Idq = 2.6 A, Vg = -0.6 V typical
Parameter
Min Typ Max
Operational Frequency Range
13.5
16
Small Signal Gain
25
Output Power @ Saturation
37.4
Power-added Efficiency @ Saturation
20
Power Temperature Coefficient
-0.004
Units
GHz dB dBm % dB/°C
Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc.
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TGA2536-FL
5.5 Watt Ku-Band Power Amplifier
Specifications (cont’d)
Thermal and Reliability Information
Parameter
Condition
Rating
Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, no RF drive
Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, under RF Drive
Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, under RF Drive
Tbase = 85 °C, Vd = 8V, Idq = 2.6 A, Pdiss = 20.8 W, pulsed 20% duty cycle
Tbase = 85 °C, Vd = 8V, Id = 3.5 A, Pout = 37.0 dBm, Pdiss = 23.0 W, pulsed 20% duty cycle
Tbase = 85 °C, Vd = 8V, Id = 3.1 A, Pout = 36.0 dBm, Pdiss = 20.8 W, CW
Tch = 149 °C Tm = 1.0E+6 Hours θJC = 3.1 °C/W
Tch = 152 °C Tm = 1.0E+6 Hours θJC = 2.9 °C/W
Tch = 173 °C Tm = 1.6E+5 Hours θJC = 4.2 °C/W
* Thermal Resistance, θJC, measured to center back of package
Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®
TGA2536-FL
5.5 Watt Ku-Band Power Amplifier
Typical Performance
Gain (dB)
Gain vs. Frequency
Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=0dBm, 25oC, 20% duty
30
25
20
15
10
5
0 13.5
14 14.5 15 15.5 Frequency (GHz)
16
Saturated Output Power (dBm)
Saturated Output Power vs. Frequency
Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=18dBm, 25oC, 20% duty
40
39
38
37
36 -40oC
25oC
35 85oC
34 13.5
14 14.5 15 Frequency (GHz)
15.5
16
Output Power, Id, Gain vs. Input Power
Vd=8V, Idq=2.6A, Vg=-0.6V, 14.5GHz, T=25oC, 20% duty
40 3.5
38 36
3
34 2.5
32 30 28
Output Power Id Gain
2 1.5
26 1
24 22
0.5
20 0
0 5 10 15
Input Power (dBm)
Output Power (dBm) and Gain (dB)
Id (A)
Power-added Efficiency (%)
IRL and ORL (dB)
Return Loss vs. Frequency
Vd=8V, Idq=2.6A, Vg=-0.6V, T=25oC, CW
0
-5
-10 IRL -15 ORL
-20
-25
-30 13.5
14 14.5 15 15.5 Frequency (GHz)
16
Power-added efficiency vs. Frequency
Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=18dBm, 25oC, 20% duty
30
25
20
15
10
-40oC 25oC
5 85oC
0 13.5 14 14.5 15 15.5 16
Frequency (GHz)
Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®
TGA2536-FL
5.5 Watt Ku-Band .