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TGA2536-FL Dataheets PDF



Part Number TGA2536-FL
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 5.5 Watt Ku-Band Power Amplifier
Datasheet TGA2536-FL DatasheetTGA2536-FL Datasheet (PDF)

TGA2536-FL 5.5 Watt Ku-Band Power Amplifier Applications  Ku-band communications  Ku-band VSAT  Point-to-Point Radio Product Features  Frequency Range: 13.5 – 16 GHz  Saturated Output Power: 37.4 dBm  Small Signal Gain: 25 dB  Bias: Vd = 8 V, Idq = 2.6 A, Vg = -0.6 V typical  Pulsed operation General Description The TriQuint TGA2536-FL provides 25 dB of small signal gain and 5.5 W of output power across 13.516 GHz. The TGA2536-FL is designed using TriQuint’s proven standard 0.25.

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TGA2536-FL 5.5 Watt Ku-Band Power Amplifier Applications  Ku-band communications  Ku-band VSAT  Point-to-Point Radio Product Features  Frequency Range: 13.5 – 16 GHz  Saturated Output Power: 37.4 dBm  Small Signal Gain: 25 dB  Bias: Vd = 8 V, Idq = 2.6 A, Vg = -0.6 V typical  Pulsed operation General Description The TriQuint TGA2536-FL provides 25 dB of small signal gain and 5.5 W of output power across 13.516 GHz. The TGA2536-FL is designed using TriQuint’s proven standard 0.25μm gate pHEMT production process. The TGA2536-FL features low loss ground-signalground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer board. This device is ideally suited for Ku-band communications including military, VSAT transmitter and Point to Point Radio applications. The flange lead package has a high thermal conductivity copper alloy base. Lead-free and RoHS compliant. Functional Block Diagram 1 14 2 13 3 12 4 11 5 10 69 78 Pin Configuration Pin # 1,7 2,6,9,13 3,5,10,12 4 8,14 11 Symbol Vg N/C Gnd RF In Vd RF Out Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc. Ordering Information Part No. ECCN TGA2536-FL 3A001.b.2.c Description Ku-band Power Amplifier - 1 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2536-FL 5.5 Watt Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage,Vd 9V Gate Voltage,Vg -5 to 0 V Drain Current, Id 4.4 A Gate Current range, Ig -18 to 18 mA RF Input Power, CW, 50Ω,T = 25ºC 21 dBm Channel Temperature, Tch 200oC Mounting Temperature (30 Seconds) 260 oC Storage Temperature -40 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Vd Idq (no RF drive) Id_drive (under RF drive) Vg Min Typ Max Units 8V 2.6 A 3.3 A -0.6 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 8 V, 20% duty cycle, Idq = 2.6 A, Vg = -0.6 V typical Parameter Min Typ Max Operational Frequency Range 13.5 16 Small Signal Gain 25 Output Power @ Saturation 37.4 Power-added Efficiency @ Saturation 20 Power Temperature Coefficient -0.004 Units GHz dB dBm % dB/°C Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc. - 2 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2536-FL 5.5 Watt Ku-Band Power Amplifier Specifications (cont’d) Thermal and Reliability Information Parameter Condition Rating Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, no RF drive Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, under RF Drive Channel Temperature (Tch), Median Lifetime (Tm), Thermal Resistance*, under RF Drive Tbase = 85 °C, Vd = 8V, Idq = 2.6 A, Pdiss = 20.8 W, pulsed 20% duty cycle Tbase = 85 °C, Vd = 8V, Id = 3.5 A, Pout = 37.0 dBm, Pdiss = 23.0 W, pulsed 20% duty cycle Tbase = 85 °C, Vd = 8V, Id = 3.1 A, Pout = 36.0 dBm, Pdiss = 20.8 W, CW Tch = 149 °C Tm = 1.0E+6 Hours θJC = 3.1 °C/W Tch = 152 °C Tm = 1.0E+6 Hours θJC = 2.9 °C/W Tch = 173 °C Tm = 1.6E+5 Hours θJC = 4.2 °C/W * Thermal Resistance, θJC, measured to center back of package Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc. - 3 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2536-FL 5.5 Watt Ku-Band Power Amplifier Typical Performance Gain (dB) Gain vs. Frequency Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=0dBm, 25oC, 20% duty 30 25 20 15 10 5 0 13.5 14 14.5 15 15.5 Frequency (GHz) 16 Saturated Output Power (dBm) Saturated Output Power vs. Frequency Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=18dBm, 25oC, 20% duty 40 39 38 37 36 -40oC 25oC 35 85oC 34 13.5 14 14.5 15 Frequency (GHz) 15.5 16 Output Power, Id, Gain vs. Input Power Vd=8V, Idq=2.6A, Vg=-0.6V, 14.5GHz, T=25oC, 20% duty 40 3.5 38 36 3 34 2.5 32 30 28 Output Power Id Gain 2 1.5 26 1 24 22 0.5 20 0 0 5 10 15 Input Power (dBm) Output Power (dBm) and Gain (dB) Id (A) Power-added Efficiency (%) IRL and ORL (dB) Return Loss vs. Frequency Vd=8V, Idq=2.6A, Vg=-0.6V, T=25oC, CW 0 -5 -10 IRL -15 ORL -20 -25 -30 13.5 14 14.5 15 15.5 Frequency (GHz) 16 Power-added efficiency vs. Frequency Vd=8V, Idq=2.6A, Vg=-0.6V, Pin=18dBm, 25oC, 20% duty 30 25 20 15 10 -40oC 25oC 5 85oC 0 13.5 14 14.5 15 15.5 16 Frequency (GHz) Preliminary Data Sheet: 6/22/2012 © 2012 TriQuint Semiconductor, Inc. - 4 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2536-FL 5.5 Watt Ku-Band .


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