T2G4003532-FL

T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 3.5 GHz Output Power (P3dB): 28 W at 3.5 GHz Linear Gain: >16 dB at 3.5 GHz Operating Voltage: 32 V Low thermal resistance package Functional Block Diagram General Description The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Pin Configuration Pin No. 1 2 Flange Label VD / RF OUT VG / RF IN Source Ordering Information Part ECCN T2G4003532-FL EAR99 T2G4003532FS/FL-EVB1 EAR99 Description Packaged part Flangeless 2.7-3.5 GHz Evaluation Board Datasheet: Rev - 12-30-13 © 2013 TriQuint - 1 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Breakdown Voltage (BVDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) RF In...