TGF2080

Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2080 800um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  29.5 dBm Typical Output Power - P1dB  11.5 dB Typical Gain @ 12 GHz  56% Typical PAE @ 12 GHz  No Vias  Technology: 0.25 um GaAs pHEMT  Chip Dimensions: 0.41 x 0.54 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. The TGF2080 is designed using TriQuint’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% poweradded efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) S (121um X 96um) Terminals Gate Drain Source (outermost) Source (center) Ordering Information Part TGF2080 ECCN EAR99 Description 800um GaAs pHEMT Datasheet: Rev B 06-26-13 © 2013 TriQuint - 1 of 6- Disclaimer: Subject to change without notice www.triquint.com TGF2080 800um Discrete GaAs pHEMT Absolute Max...