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AG603-89G

TriQuint Semiconductor

InGaP HBT Gain Block

Applications • Mobile Infrastructure • CATV / FTTX • W-LAN / ISM • WCDMA / LTE AG603-89G InGaP HBT Gain Block AG603G SO...


TriQuint Semiconductor

AG603-89G

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Description
Applications Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE AG603-89G InGaP HBT Gain Block AG603G SOT-89 Package Product Features DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz 18.5 dB Gain at 900 MHz Single Voltage Supply SOT-89 package Internally matched to 50 Ω Functional Block Diagram Backside Paddle - GND 1 RF IN 2 GND 3 RF OUT / VCC General Description The AG603-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG603-89 typically provides 18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 °C and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. The AG603-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA and LTE. In addition, the AG603-89 will work for other applications within the DC to 3 GHz frequency range such as CATV. Pin Configuration Pin No. 1 2 3 Backside Paddle Label RF IN GND RF OUT / VCC GND Ordering Information Part No. Description AG603-89G InGaP/GaAs HBT Gai...




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