CS12N65FA9H

Huajing Discrete Devices ○R Silicon N-Channel Power MOSFET CS12N65F A9H General Description： CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 12 55 0.54 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering 650 12 10 48 ±30 700 100 4.5 5.0 55 0.44 150，–55 to 150 300 V A W Ω Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ Page 1 of 10 2012 Huajing Discrete Devices ○R CS12N65F A9H Electrical Characteristics（Tc= 25℃ unless otherwise...