N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS12N60CT/FT
MAIN CHARACTERISTICS
Package
ID 12 A VDSS 600 V Rdson(@Vgs=10V) 0.65Ω Qg 39nC
...
Description
N R N-CHANNEL MOSFET
JCS12N60CT/FT
MAIN CHARACTERISTICS
Package
ID 12 A VDSS 600 V Rdson(@Vgs=10V) 0.65Ω Qg 39nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 23pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS12N60CT-O-C-N-B JCS12N60CT JCS12N60FT-O-F-N-B JCS12N60FT
Package
TO-220C TO-220MF
Halogen
Free NO NO
Packaging
Tube Tube
Device Weight 2.15 g(typ) 2.20 g(typ)
:200911A
1/10
R
ABSOLUTE RATINGS (Tc=25℃)
JCS12N60CT/FT
Parameter
Symbol
Value JCS12N60CT JCS12N60FT
- Drain-Source Voltage
VDSS
600 600
Drain Current -continuous
ID T=25℃ T=100℃
12 7.6
12* 7.6*
( 1)
Drain Current - pulse
(note 1)
IDM
48 48*
Gate-Source Voltage
VGSS
±30
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
880
( 1) Avalanche Current(note 1)
IAR
12
( 1) Repetitive Avalanche Current(note 1)
EAR
25
( 3) Peak Diode Recovery dv/dt(note 3)
dv/dt
4.5
Power Dissipation
PD TC=25℃ -Derate above
250 2.0
51 0.41
25℃
Operating and Storage Temperature Range
TJ,TSTG
55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
*
*Drain current limited by maximum junction temperature
Unit V A A A V mJ A mJ V/ns W
W/℃
℃
℃
:200911A
2/10
R
ELECTRICAL CHARACTERISTICS
JCS12N60CT/FT
Para...
Similar Datasheet