SMD Type
Transistors
NPN Transistors 2SD1221
■ Features
● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.)...
SMD Type
Transistors
NPN Transistors 2SD1221
■ Features
● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
+1.50 0.15 -0.15
0.80+0.1 -0.1
0.127 m ax
+ 0.155 .5 5 -0.15
3.80
Unit: mm
+02.65 .25 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation
Junction Temperature Storage Temperature Range
Ta = 25℃ Tc = 25℃
■ Electrical Characteristics Ta = 25℃
Symbol VCBO VCEO VEBO IC IB
PC
TJ Tstg
2.3 4 .60 +0.15
-0.15
0.60+ 0.1 - 0.1
Rating 60 60 7 3 0.5 1 20 150
-55 to 150
Unit V
A W ℃
1 Base 2 Collector 3 Emitter
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitte voltage
DC current gain
Turn-on time Storage time Fall time Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 50 mA, IB= 0
VEBO IE= 100μA, IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=300mA
VBE(sat) IC=3 A, IB=300mA
VBE VCE= 5V, IC= 500mA
hFE(1) VCE= 5V...