2SK536

Ordering number : EN2550B 2SK536 N-Channel MOSFET 50V, 100mA, Single CP http://onsemi.com Features Large | yfs | Enhancement type Low ON-state resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature VDS VGS ID IDP PD Tch Storage Temperature Tstg Conditions Ratings 50 ±12 100 300 200 125 --55 to +125 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7013A-010 Ordering & Package Information Device Package Shipping 2SK536-TB-E CP SC-59, TO-236, SOT-23, TO-236AB 3,000pcs./reel memo Pb-Free 2.9 3 0.1 2SK536-TB-E Packing Type: TB Marking 0.05 1.1 2.5 0.3 0.5 1.5 0.5 LOT No. LOT No. 1 0.95 2 0.4 1 : Gate 2 : Drain 3 : Source CP TB Electrical Connection 2 1 BJ 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71713 TKIM/52899TH (KT)/4237TA, TS No.2550-1/4 2SK536 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Gate to Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Re...