TGA2573

TGA2573 2-18 GHz 10 Watt GaN Amplifier Applications Military Radar Communications Electronic warfare Electronic counter measures Test Equipment Product Features Frequency Range: 2 – 18 GHz Psat: 40.0 dBm at Vd=30 V PAE: 25% typical Small Signal Gain: 9 dB Return Loss: 15 dB Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical Technology: 0.25 µm GaN on SiC Dimensions: 2.55 x 5.54 x 0.1 mm General Description TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both commercial and defense related applications. The TGA2573 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant Functional Block Diagram Vg 4 RF In 1 TGA2573 2 RF 3 Out Vd Bond Pad Configuration Bond Pad # 1 2 3 4 Symbol RF In Vd RF Out Vg Ordering Information Part No. TGA2573 ECCN XI(c) Description GaN on SiC Die The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited. Preliminary Data Sheet: Rev. A 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 16 - Disclai...