Si4835DDY

New Product P-Channel 30-V (D-S) MOSFET Si4835DDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.030 at VGS = - 4.5 V ID (A)d - 13 - 10 Qg (Typ.) 22 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Desktop PCs S G Top View Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free) Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 25 - 13 - 10.5 - 8.7a, b - 7.7a, b - 50 - 4.6 2.0a, b - 20 20 5.6 3.6 2.5a, b 1.6a, b - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. t ≤ 10 s Steady State Document Number: 69953 S09-0136-Rev. B...