Si1307EDL

P-Channel 1.8 V (G-S) MOSFET Si1307EDL Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.290 at VGS = - 4.5 V 0.435 at VGS = - 2.5 V 0.580 at VGS = - 1.8 V ID (A) ± 0.91 ± 0.74 ± 0.64 FEATURES Halogen-free According to IEC 61249-2-21 Definition ESD Protection: 3000 V Compliant to RoHS Directive 2002/95/EC SOT-323 SC-70 (3-LEADS) G1 S2 3D Marking Code YY LF XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1307EDL-T1-E3 (Lead (Pb)-free) Si1307EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg - 12 ±8 ± 0.91 ± 0.85 ± 0.72 ± 0.68 ±3 - 0.28 - 0.24 0.34 0.29 0.22 0.19 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit °C/W Document Number: 71096 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 Si1307EDL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditio...