FDC642P_F085

FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A „ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A „ Fast switching speed „ Low gate charge(6.9nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Load switch „ Battery protection „ Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 4.5V) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SSOT-6, 1in2 copper pad area Ratings -20 ±8 -4 -20 72 1.2 -55 to +150 Units V V A mJ W oC 30 oC/W 103 oC/W Package Marking and Ordering Information Device Marking Device FDC642P FDC642P_F085 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Condit...