FDS9431A_F085

FDS9431A_F085 P-Channel 2.5V Specified MOSFET FDS9431A_F085 P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications DC/DC converter Power management Load switch Battery protection February 2010 tm Features -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability. Qualified to AEC Q101 RoHS Compliant D D D D 5 6 SO-8 G SS S 7 8 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient RqJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS9431A FDS9431A_F085 13’’ ©2010 Fairchild Semiconductor Corporation FDS9431A_F085 Rev. A 1 4 3 2 1 Ratings -20 ±8 -3.5 -18 2.5 1.2 1.0 -55 to +150 50 25 Units V V A W °C °C/W °C/W Tape width 12mm Quant...