FDS9958_F085

FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description „ Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A „ Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A „ Qualified to AEC Q101 „ RoHS Compliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications „ Load Switch „ Power Management D2 D1 D1 D2 D2 5 D2 6 Q2 4 G2 3 S2 Pin 1 G2 S2 G1 S1 SO-8 D1 7 D1 8 Q1 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -60 ±20 -2.9 -12 54 2 1.6 0.9 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 40 78 °C/W Device Marking FDS9958 ...