P-Channel PowerTrench MOSFET
FDD4685_F085 P-Channel PowerTrench® MOSFET
FDD4685_F085
P-Channel PowerTrench® MOSFET
-40V, -32A, 35mΩ
Features
Typ ...
Description
FDD4685_F085 P-Channel PowerTrench® MOSFET
FDD4685_F085
P-Channel PowerTrench® MOSFET
-40V, -32A, 35mΩ
Features
Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low
rDS(on) RoHS Compliant
Qualified to AEC Q101
Applications
Inverter Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C
1
www.fairchildsemi.com
FDD4685_F085 P-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage Drain Current Continuous (TC<90oC, VGS = 10V) Pulsed
EAS Single Pulse Avalanche Energe
PD
Power Dissipation Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings -40 ±20 -32
See Figure 4 121 83 0.56
-55 to +175
Units V V
A
mJ W W/oC oC
RθJC
Maximum Thermal Resistance Junction to Case
1.8 oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD4685
FDD4685_F085
Package TO252
Reel Size 13”
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Tape Width 12mm
Quantity 2500 units
Min Typ Max Units
BVDSS ΔBVDSS
ΔTJ IDSS IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Tempera...
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