Document
2SD2271
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2271
Motor Drive Applications High-Current Switching Applications
Unit: mm
• High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
300 200
6 ±12 ±18
1 2.0 30 150 −55 to 150
Unit V V V
A
A
W
°C °C
Equivalent Circuit
Base
Collector
≈ 500 Ω
≈ 70 Ω
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
1 2004-07-26
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter sustaining voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CBO VCEO (SUS) hFE (1) hFE (2) VCE (sat) VBE (sat) VECF
fT Cob
VCB = 300 V, IE = 0 VEB = 6 V, IC = 0 IC = 1 mA, IE = 0 IC = 0.25 A, L = 40 mH VCE = 2 V, IC = 5 A VCE = 2 V, IC = 10 A IC = 10 A, IB = 0.1 A IC = 10 A, IB = 0.1 A IE = 10 A, IB = 0 VCE = 2 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
2SD2271
Min Typ. Max Unit
― ― 100 µA
50 ― 150 mA
300 ―
―
V
200 ―
―
V
500 ― 5000
100 ―
―
― ― 2.0 V
― ― 2.3 V
― 1.5 2.0
V
― 40 ― MHz
― 200 ―
pF
Turn-on time Switching time Storage time
Fall time
ton Input IB1
tstg
20 µs
IB2
Output ―
― 1.0
― ― 12 µs
IB1 IB2
10 Ω
VCC = 100 V
tf IB1 = −IB2 = 0.1 A, duty cycle ≤ 1%
― ― 2.0
Marking
D2271
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2 2004-07-26
Collector current IC (A)
IC – VCE
16
Common emitter
Tc = 25°C
12 25
20
15 10
8
5 4 3
2
4 IB = 1 mA
0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
10 Common emitter IC/IB = 50
VCE (sat) – IC
3
1 Tc = 100°C
−55 0.3
25
0.1 0.1
0.3 1 3 10 20 Collector current IC (A)
Base-emitter saturation voltage VBE (sat) (V)
DC current gain hFE
)
2SD2271
10000 Common emitter VCE = 2 V
3000
1000
hFE – IC
Tc = 100°C 25 −55
300 100
30 0.1 0.3 1 3 10 20 Collector current IC (A)
VBE (sat) – IC
10 Common emitter IC/IB = 50
3 Tc = 100°C
1 25 −55
0.3
0.1 0.1
0.3 1 3 10 20 Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC (A)
16 Common emitter VCE = 2 V
12
IC – VBE
8
Tc = 100°C 25
−55
4
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage VBE (V)
Collector power dissipation PC (W)
40 30 (1)
PC – Ta
(1) Tc = Ta Infinite heat sink
(2) No heat sink
20
10
(2) 0 0 40 80 120 160 200
Ambient temperature Ta (°C)
3 2004-07-26
Transient thermal resistance rth (°C/W)
2SD2271
rth – tw
100 Curves should be applied to the thermally limited region.
30 (single nonrepetitive pulse) (1) Infinite heat sink
10 (2) N h t i k
3
1
0.3 0.1 0.001
0.01
0.1 1 10 Pulse width tw (s)
(2) (1)
100 1000
Safe Operating Area
30 20 IC max (pulsed)*
10
IC max (continuous) 3
10 ms*
DC operation Tc = 25°C
1
1 ms* 100 µs*
0.3 *: Single nonrepetitive pulse Tc = 25°C
Curves must be derated 0.1 linearly with increase in
temperature
0.05 1 3 10
VCEO max 30 100
Collector-emitter voltage VCE (V)
300
Collector current IC (A)
4 2004-07-26
2SD2271
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
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