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D2271 Dataheets PDF



Part Number D2271
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SD2271
Datasheet D2271 DatasheetD2271 Datasheet (PDF)

2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Jun.

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2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 300 200 6 ±12 ±18 1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit Base Collector ≈ 500 Ω ≈ 70 Ω Emitter JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 1 2004-07-26 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter sustaining voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CBO VCEO (SUS) hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 300 V, IE = 0 VEB = 6 V, IC = 0 IC = 1 mA, IE = 0 IC = 0.25 A, L = 40 mH VCE = 2 V, IC = 5 A VCE = 2 V, IC = 10 A IC = 10 A, IB = 0.1 A IC = 10 A, IB = 0.1 A IE = 10 A, IB = 0 VCE = 2 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz 2SD2271 Min Typ. Max Unit ― ― 100 µA 50 ― 150 mA 300 ― ― V 200 ― ― V 500 ― 5000 100 ― ― ― ― 2.0 V ― ― 2.3 V ― 1.5 2.0 V ― 40 ― MHz ― 200 ― pF Turn-on time Switching time Storage time Fall time ton Input IB1 tstg 20 µs IB2 Output ― ― 1.0 ― ― 12 µs IB1 IB2 10 Ω VCC = 100 V tf IB1 = −IB2 = 0.1 A, duty cycle ≤ 1% ― ― 2.0 Marking D2271 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 Collector current IC (A) IC – VCE 16 Common emitter Tc = 25°C 12 25 20 15 10 8 5 4 3 2 4 IB = 1 mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 10 Common emitter IC/IB = 50 VCE (sat) – IC 3 1 Tc = 100°C −55 0.3 25 0.1 0.1 0.3 1 3 10 20 Collector current IC (A) Base-emitter saturation voltage VBE (sat) (V) DC current gain hFE ) 2SD2271 10000 Common emitter VCE = 2 V 3000 1000 hFE – IC Tc = 100°C 25 −55 300 100 30 0.1 0.3 1 3 10 20 Collector current IC (A) VBE (sat) – IC 10 Common emitter IC/IB = 50 3 Tc = 100°C 1 25 −55 0.3 0.1 0.1 0.3 1 3 10 20 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 16 Common emitter VCE = 2 V 12 IC – VBE 8 Tc = 100°C 25 −55 4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Base-emitter voltage VBE (V) Collector power dissipation PC (W) 40 30 (1) PC – Ta (1) Tc = Ta Infinite heat sink (2) No heat sink 20 10 (2) 0 0 40 80 120 160 200 Ambient temperature Ta (°C) 3 2004-07-26 Transient thermal resistance rth (°C/W) 2SD2271 rth – tw 100 Curves should be applied to the thermally limited region. 30 (single nonrepetitive pulse) (1) Infinite heat sink 10 (2) N h t i k 3 1 0.3 0.1 0.001 0.01 0.1 1 10 Pulse width tw (s) (2) (1) 100 1000 Safe Operating Area 30 20 IC max (pulsed)* 10 IC max (continuous) 3 10 ms* DC operation Tc = 25°C 1 1 ms* 100 µs* 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated 0.1 linearly with increase in temperature 0.05 1 3 10 VCEO max 30 100 Collector-emitter voltage VCE (V) 300 Collector current IC (A) 4 2004-07-26 2SD2271 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended fo.


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