Document
STB10N60M2, STD10N60M2, STP10N60M2
Datasheet
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages
TAB
2 3
1
D²PAK
TAB
TAB
23 1
DPAK
TO-220
3 2 1
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order codes VDS @ TJ max. RDS(on) max.
STB10N60M2
STD10N60M2
650 V
0.60 Ω
STP10N60M2
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected
ID 7.5 A
Package D²PAK DPAK TO-220
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status links STB10N60M2 STD10N60M2 STP10N60M2
DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
STB10N60M2, STD10N60M2, STP10N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse limited by safe operating area. 2. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs, VDS peak < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V.
Value ±25 7.5 4.9 30 85 15 50
-55 to 150
Unit V
A
A W V/ns °C °C
Table 2. Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJB(1)
Thermal resistance, junction-to-board
RthJA
Thermal resistance, junction-to-ambient
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
D2PAK 30
Value DPAK 1.47
50
TO-220 62.5
Unit
°C/W °C/W °C/W
Table 3. Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not repetitive
EAS(2)
Single pulse avalanche energy
1. Pulse width limited by TJ max. 2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.
Value
Unit
1.5
A
110
mJ
DS9703 - Rev 4
page 2/27
STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 3 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
600
V
1 µA
100
±10 µA
2
3
4
V
0.55 0.60 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. .