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STD10N60M2 Dataheets PDF



Part Number STD10N60M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STD10N60M2 DatasheetSTD10N60M2 Datasheet (PDF)

STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3 1 D²PAK TAB TAB 23 1 DPAK TO-220 3 2 1 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications •.

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STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3 1 D²PAK TAB TAB 23 1 DPAK TO-220 3 2 1 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse limited by safe operating area. 2. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs, VDS peak < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V. Value ±25 7.5 4.9 30 85 15 50 -55 to 150 Unit V A A W V/ns °C °C Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB(1) Thermal resistance, junction-to-board RthJA Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4, 2 Oz copper board. D2PAK 30 Value DPAK 1.47 50 TO-220 62.5 Unit °C/W °C/W °C/W Table 3. Avalanche characteristics Symbol Parameter IAR(1) Avalanche current, repetitive or not repetitive EAS(2) Single pulse avalanche energy 1. Pulse width limited by TJ max. 2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V. Value Unit 1.5 A 110 mJ DS9703 - Rev 4 page 2/27 STB10N60M2, STD10N60M2, STP10N60M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3 A 1. Defined by design, not subject to production test. Min. Typ. Max. Unit 600 V 1 µA 100 ±10 µA 2 3 4 V 0.55 0.60 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. .


STB10N60M2 STD10N60M2 STP10N60M2


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