STP10N60M2

STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3 1 D²PAK TAB TAB 23 1 DPAK TO-220 3 2 1 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2 Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STB10N60M2, STD10N60M2, STP10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse l...