STU10N60M2

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220 TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram , TAB Features Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 Table 1. Device summary Marking Package 2 D PAK 10N60M2 DPAK TO-220 IPAK Packaging Tape and reel Tube December 2013 This is information on a product in full production. DocID024710 Rev 2 1/24 www.st.com 24 Contents Contents STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . ...