KDS142E

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (1 s) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 0.7 RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW A G H KDS142E SILICON EPITAXIAL PLANAR DIODE C E B DIM MILLIMETERS A 1.60+_ 0.10 2 D B 0.85+_ 0.10 13 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 3 21 ESM Marking DS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR TEST CONDITION IF=10mA VR=15V MIN. - TYP. - MAX. 1.0 0.1 UNIT V A 2003. 1. 27 Revision No : 0 1/2 FORWARD CURRENT I F (mA) KDS142E I F - VF 100 D1 D1+D2 10 1 Ta=-25 C C C Ta=75 Ta=25 Ta=125 C C C C C Ta=125 Ta=75 TTaa==-2255 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 FORWARD VOLTAGE VF (V) 2.4 FORWARD CURRENT I F (mA) 100 10 1 0.1 0.01 0 I F - VF D2 C C C C Ta=25 Ta=-25 Ta=125 Ta=75 0.4 0.8 1.2 FORWARD VOLTAGE VF (V) 1.6 100 10 1 0.1 0.01 0 I R - VR Ta=125 C Ta=125 C Ta=100 C Ta=100 C Ta=75 C Ta=75 C D1 D2 D1 D2 D1 D2 5 10 REVERSE VOLTAGE VR (V) 15 C T - V...